Наукові статті

Non-destructive control of critical defects and diagnostics of InGaN/ GaN heterostructures in power LEDs by using their microplasma characteristics

Борщ, В.В.

In this work, we studied the controlled microplasma breakdown of InGaN/GaN heterostructures in power light-emitting diodes (LEDs) prepared on various substrates (SiC, AuSn/Si, Al2O3). It was ascertained that LED microplasma characteristics are related to their functional parameters. It was shown that nondestructive control of the critical defects and diagnostics of the InGaN/GaN power LEDs are possible because they are based on the following parameters of microplasmas: (1) voltage of the first microplasma; (2) current of the first microplasma; (3) amount of the microplasmas; (4) integrated luminescence intensity of the microplasmas; (5) ratio of the blue and yellow band luminescence peak intensities for the microplasmas; (6) displacement between electroluminescence peaks for forward and reverse biases. It was ascertained that the majority of microplasmas arise near the faces of the crystallites’ grain boundaries.

English

2015

power LED

Materials Research Express: IOP Publishing

Veleschuk V.H. Non-destructive control of critical defects and diagnostics of InGaN/ GaN heterostructures in power LEDs by using their microplasma characteristics / V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, M.P. Kisselyuk, V.V. Borshc // Materials Research Express. - 2015. - Vol. 2.

621.8